Key Responsibilities
Design and develop high-power InP-based DFB laser diodes for AI and optical interconnect applications
Develop epitaxial structures, waveguides, gratings, and device geometries
Optimize laser performance, efficiency, and spectral output
Support III-V fabrication process development and manufacturing transfer
Perform electro-optical characterization, testing, and failure analysis
Drive mask layout and photonic device implementation
Collaborate with fabrication, packaging, and engineering teams
Support next-generation product development and technical innovation
Contribute to technical documentation, IP generation, and product roadmaps
Qualifications
PhD in Electrical Engineering, Physics, Materials Science, or related field
5+ years of experience in optoelectronic or semiconductor laser development
Strong expertise in InP-based DFB laser design and semiconductor laser physics
Experience with epitaxial growth processes such as MOCVD or MBE
Strong knowledge of III-V semiconductor processing and fabrication
Experience with electro-optical characterization and failure analysis
Proven experience taking laser devices from concept to production
Strong analytical, troubleshooting, and problem-solving skills
Excellent communication and cross-functional collaboration abilities
Experience in AI infrastructure, telecom, or photonics industry is a plus